Samsung Foundry innovations fuel the future of big data, AI / ML and smart devices


Article by: Samsung Electronics

Samsung’s first 3nm GAA process node will allow up to 35% surface area reduction, 30% higher performance, or 50% lower power consumption compared to the 5nm process.

Samsung Electronics unveiled plans for the continued migration of process technology to 3nm and 2nm based on the company’s Gate-All-Around (GAA) structure at its recent 5th Annual Samsung Foundry Forum ( SFF) 2021.

At this year’s event, Samsung shared its vision to strengthen its leadership in the rapidly evolving foundry market by taking each respective part of the foundry business to the next level: process technology, manufacturing operations. and foundry services.

“We will increase our overall production capacity and lead the most advanced technologies while pushing silicon to scale and pursuing technological innovation by application,” said Dr. Siyoung Choi, president and head of foundry operations at Samsung Electronics. “Amid the increased digitization brought about by the COVID-19 pandemic, our customers and partners will discover the limitless potential of implementing silicon to deliver the right technology at the right time. “

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With its enhanced power, performance and flexible design capability, Samsung’s unique GAA technology, Multi-Bridge-Channel FET (MBCFET), is essential for continued process migration. Samsung’s first 3nm GAA process node using MBCFET will allow up to 35% area reduction, 30% better performance or 50% lower power consumption compared to the 5nm process. In addition to power, performance, and area (PPA) improvements, as its process maturity has increased, the logic efficiency of the 3nm approaches a similar level to that of the 4nm process, which is currently in progress. mass production.

Samsung is expected to start producing its customers’ first 3nm chip designs in the first half of 2022, while its second 3nm generation is expected in 2023. Newly added to Samsung’s technology roadmap, the Process Node 2nm with MBCFET is in early stages of development with mass production in 2025.

FinFET for CIS, DDI, MCU – debut in 17nm specialty processing technology

Samsung Foundry is continuously improving its FinFET process technology to support specialty products with cost-effective and application-specific competitiveness. The company’s 17nm FinFET process node is a good example. In addition to the intrinsic advantages offered by FinFET, the process node has excellent performance and energy efficiency based on a 3D transistor architecture. Therefore, Samsung’s 17nm FinFET offers up to 43% area reduction, 39% better performance, or 49% increase in power efficiency over the 28nm process.

Additionally, Samsung is advancing its 14nm process to support 3.3V high voltage onboard MRAM (eMRAM) or flash, which allows for increased write speed and density. It will be a great option for applications like microcontroller units (MCUs), IoT, and portable devices. Samsung’s 8nm radio frequency (RF) platform is expected to extend the company’s leadership in the 5G semiconductor market from sub-6 GHz applications to mmWave applications.

Going forward, in cooperation with its ecosystem partners, the Samsung Foundry SAFE Forum will be held virtually in November 2021.

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